Performance Enhancement and Comparison of Graphene Field Effect Transistor Devices Coated with HMDS Layer

نویسندگان

چکیده

Graphene-based devices show good transfer characteristics, which depend upon the surface morphology of material and substrate. During fabrication device, substrate is disturbed inappropriately by contamination. In present study, monolayer Graphene Field Effect Transistor (GFET) has been driven with hydrophobic Hexamethyl Disilazane (HMDS) layer. The HMDS layer dehydrated before after exfoliated graphene, electrical characteristics were measured. curve coated graphene device demonstrates excellent FET prevents contamination from atmosphere under ambient conditions. Fabrication GFET on enhances effective ambipolar behavior. It beginning an platform user-friendly for biosensing applications.

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ژورنال

عنوان ژورنال: Silicon

سال: 2022

ISSN: ['1876-9918', '1876-990X']

DOI: https://doi.org/10.1007/s12633-022-01773-w